SE97B_1
?NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 27 January 2010
37 of 53
NXP Semiconductors
SE97B
DDR memory module temp sensor with integrated SPD
V
OL(SDA)
= LOW-level output voltage on pin SDA
V
OL(EVENT)
= LOW-level output voltage on pin EVENT
I
OL(sink)(SDA)
= SDA output current LOW
I
OL(sink)EVENT
= EVENT
output current LOW
Calculation example:
T
amb
(typical temperature inside the notebook) = 50 癈
I
DD(AV)
= 400 糀
V
DD
= 3.6 V
Maximum V
OL(SDA)
= 0.4 V
I
OL(sink)(SDA)
= 1 mA
V
OL(EVENT)
= 0.4 V
I
OL(sink)EVENT
= 3 mA
R
th(j-a)
= 56 癈/W
Self heating due to power dissipation is:
(2)
9.4 Hot plugging
The SE97B can be used in hot plugging applications. Internal circuitry prevents damaging
current backflow through the device when it is powered down, but with the I
2
C-bus,
EVENT
or address pins still connected. The open-drain SDA and EVENT
pins (SCL and
address pins are input only) effectively places the outputs in a high-impedance state
during power-up and power-down, which prevents driver conflict and bus contention. The
50 ns noise filter will filter out any insertion glitches from the state machine, which is very
robust and not prone to false operation.
The device needs a proper power-up sequence to reset itself, not only for the device
I
2
C-bus and I/O initial states, but also to load specific pre-defined data or calibration data
into its operational registers. The power-up sequence should occur correctly with a fast
ramp rate and the I
2
C-bus active. The SE97B might not respond immediately after
power-up, but it should not damage the part if the power-up sequence is abnormal. If the
SCL line is held LOW, the part will not exit the power-on reset mode since the part is held
in reset until SCL is released.
?SPAN class="pst SE97BTP-547_2318313_9">T 56
3.6 0.4
?/DIV>
(
) 0.4 3
?/DIV>
(
) 0.4 1
?/DIV>
(
)
+
+
[
]
?/DIV>
56 ?/SPAN>C W 3.04 mW 0.17 ?/SPAN>C
=
?/DIV>
D
=
=
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